"...IBM claims to have developed the world's first transistor based on SSDOI technology. The sub-60-nm, field-effect transistor provides high electron mobility, while eliminating the material and process integration problems with today's silicon-germanium (SiGe) technology.
The Armonk-based company has also developed the so-called HOT technology, which combines two substrates in the same wafer for CMOS devices. This results in a 40 percent to 65 percent performance boost for CMOS devices, according to IBM.
Both technologies are designed to extend Moore's Law and enable higher-performance, lower-power devices. 'These two innovative techniques are relatively simple to implement without requiring much additional manufacturing costs,' said T. C. Chen, vice president of science and technology at IBM Research, in a statement."
Read more regarding the new processes themselves here.